# Graphene electronics

> Graphene devices in six panels: a Hall bar on SiO₂/Si, an hBN-encapsulated device with edge contacts, the field-effect transfer curve, RF transistors with an f_T benchmark, a suspended mechanical resonator, and the quantum Hall resistance standard on epitaxial graphene.

- Page: https://www.labcanvas.com/templates/graphene-research/graphene-electronics
- Open in the LabCanvas editor (LabCanvas account): https://www.labcanvas.com/editor.html?template=graphene-electronics-applications
- Updated: 2026-10-14
- Category: Graphene research
- Method: Electronics
- Starting materials: Exfoliated graphene on SiO₂/Si or in hBN, epitaxial graphene on SiC
- Product: Transistors, resonators and quantum resistance standards
- Key result: Devices drawn in 3D after the cited papers, heights exaggerated; curves computed from the cited models; the resonator’s quality factor and the field axis of the plateaus are settings without numbers
- Figure: 1920 × 1080 px, 45 editable layers (6 generated objects with settings)

## Steps

1. **Hall bar**: Graphene on SiO₂ over doped Si as the back gate (Novoselov et al. 2004); current through the end contacts, V_xx measured along the channel and V_xy across it
2. **Encapsulated, edge-contacted**: hBN/graphene/hBN stacks contacted by metal along the one-dimensional edge (Wang et al. 2013); hBN as a substrate for high-quality graphene (Dean et al. 2010)
3. **Field effect**: The resistance peaks at the Dirac point; on 300 nm SiO₂ each volt on the gate adds 7.2 × 10¹⁰ carriers per cm², and the first devices reached about 10,000 cm²/V·s at room temperature (Novoselov et al. 2004)
4. **RF transistors**: On epitaxial graphene on the Si face of SiC, a cutoff frequency of 100 GHz for a gate length of 240 nm (Lin et al. 2010); f_T is the unity-current-gain frequency (Petrone et al. 2013)
5. **Resonators**: Single- and multilayer sheets exfoliated over trenches in silicon oxide vibrate at fundamental frequencies in the MHz range, actuated optically or electrically and read out by interferometry (Bunch et al. 2007)
6. **Resistance standard**: Monolayer epitaxial graphene quantized the Hall resistance to 3 parts per billion at 300 mK (Tzalenchuk et al. 2010); on epitaxial graphene only ν = 2, 6, 10 appear and only the ν = 2 plateau, R_K/2 ≈ 12 906 Ω, is fully quantized (Panna et al. 2021; Liu et al. 2020)

## Strengths

- The gate tunes graphene from holes to electrons
- High-frequency operation on wafer-scale SiC (Lin et al. 2010)
- A resistance standard from a single material (Tzalenchuk et al. 2010)

## Limitations

- No band gap: transistors do not switch off
- Contacts and substrates limit the mobility

## Uses

- RF amplifiers and mixers
- Mass and charge sensing
- Electrical metrology

## References

1. Novoselov et al., “Electric field effect in atomically thin carbon films”, Science 2004. https://doi.org/10.1126/science.1102896 (primary)
2. Wang et al., “One-dimensional electrical contact to a two-dimensional material”, Science 2013. https://doi.org/10.1126/science.1244358 (primary)
3. Lin et al., “100-GHz transistors from wafer-scale epitaxial graphene”, Science 2010. https://doi.org/10.1126/science.1184289 (primary)
4. Bunch et al., “Electromechanical resonators from graphene sheets”, Science 2007. https://doi.org/10.1126/science.1136836 (primary)
5. Tzalenchuk et al., “Towards a quantum resistance standard based on epitaxial graphene”, Nat. Nanotechnol. 2010. https://doi.org/10.1038/nnano.2009.474 (primary)
6. Dean et al., “Boron nitride substrates for high-quality graphene electronics”, Nat. Nanotechnol. 2010. https://doi.org/10.1038/nnano.2010.172 (further reading)
7. Petrone et al., “Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates”, Nano Lett. 2013. https://doi.org/10.1021/nl303666m (further reading)
8. Liao et al., “High-speed graphene transistors with a self-aligned nanowire gate”, Nature 2010. https://doi.org/10.1038/nature09405 (further reading)
9. Panna et al., “Graphene quantum Hall effect parallel resistance arrays”, Phys. Rev. B 2021. https://doi.org/10.1103/physrevb.103.075408 (further reading)
10. Liu et al., “Analysing quantized resistance behaviour in graphene Corbino p-n junction devices”, J. Phys. D 2020. https://doi.org/10.1088/1361-6463/ab83bb (further reading)
11. Kim et al., “Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric”, Appl. Phys. Lett. 2009. https://doi.org/10.1063/1.3077021 (further reading)

Credit: Drawn and computed by LabCanvas after Novoselov et al., Science 2004 (doi:10.1126/science.1102896), Wang et al., Science 2013, Lin et al., Science 2010, Bunch et al., Science 2007, Tzalenchuk et al., Nat. Nanotechnol. 2010, and the papers in the details.

## Questions

**What does the “Graphene electronics” template show?** Graphene devices in six panels: a Hall bar on SiO₂/Si, an hBN-encapsulated device with edge contacts, the field-effect transfer curve, RF transistors with an f_T benchmark, a suspended mechanical resonator, and the quantum Hall resistance standard on epitaxial graphene.

**What are the steps shown in “Graphene electronics”?** 1. Hall bar: Graphene on SiO₂ over doped Si as the back gate (Novoselov et al. 2004); current through the end contacts, V_xx measured along the channel and V_xy across it. 2. Encapsulated, edge-contacted: hBN/graphene/hBN stacks contacted by metal along the one-dimensional edge (Wang et al. 2013); hBN as a substrate for high-quality graphene (Dean et al. 2010). 3. Field effect: The resistance peaks at the Dirac point; on 300 nm SiO₂ each volt on the gate adds 7.2 × 10¹⁰ carriers per cm², and the first devices reached about 10,000 cm²/V·s at room temperature (Novoselov et al. 2004). 4. RF transistors: On epitaxial graphene on the Si face of SiC, a cutoff frequency of 100 GHz for a gate length of 240 nm (Lin et al. 2010); f_T is the unity-current-gain frequency (Petrone et al. 2013). 5. Resonators: Single- and multilayer sheets exfoliated over trenches in silicon oxide vibrate at fundamental frequencies in the MHz range, actuated optically or electrically and read out by interferometry (Bunch et al. 2007). 6. Resistance standard: Monolayer epitaxial graphene quantized the Hall resistance to 3 parts per billion at 300 mK (Tzalenchuk et al. 2010); on epitaxial graphene only ν = 2, 6, 10 appear and only the ν = 2 plateau, R_K/2 ≈ 12 906 Ω, is fully quantized (Panna et al. 2021; Liu et al. 2020).

**What are the starting materials and the product?** Starting materials: Exfoliated graphene on SiO₂/Si or in hBN, epitaxial graphene on SiC. Product: Transistors, resonators and quantum resistance standards.

**Which papers is “Graphene electronics” based on?** Novoselov et al., “Electric field effect in atomically thin carbon films”, Science 2004 (doi:10.1126/science.1102896); Wang et al., “One-dimensional electrical contact to a two-dimensional material”, Science 2013 (doi:10.1126/science.1244358); Lin et al., “100-GHz transistors from wafer-scale epitaxial graphene”, Science 2010 (doi:10.1126/science.1184289); Bunch et al., “Electromechanical resonators from graphene sheets”, Science 2007 (doi:10.1126/science.1136836); Tzalenchuk et al., “Towards a quantum resistance standard based on epitaxial graphene”, Nat. Nanotechnol. 2010 (doi:10.1038/nnano.2009.474); Dean et al., “Boron nitride substrates for high-quality graphene electronics”, Nat. Nanotechnol. 2010 (doi:10.1038/nnano.2010.172); Petrone et al., “Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates”, Nano Lett. 2013 (doi:10.1021/nl303666m); Liao et al., “High-speed graphene transistors with a self-aligned nanowire gate”, Nature 2010 (doi:10.1038/nature09405); Panna et al., “Graphene quantum Hall effect parallel resistance arrays”, Phys. Rev. B 2021 (doi:10.1103/physrevb.103.075408); Liu et al., “Analysing quantized resistance behaviour in graphene Corbino p-n junction devices”, J. Phys. D 2020 (doi:10.1088/1361-6463/ab83bb); Kim et al., “Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric”, Appl. Phys. Lett. 2009 (doi:10.1063/1.3077021).

**Can I edit the “Graphene electronics” template?** Yes. Open it in the LabCanvas editor: all 45 layers are editable, including 6 generated objects (structures, plots, equipment) with their own settings. Change the text, colours and layout, then export PNG, TIFF, SVG or PDF.

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