# Graphene on SiC for remote epitaxy and layer transfer

> Epitaxial graphene on SiC can serve as a reusable growth template. A single-crystal GaN film is grown on the graphene, a nickel stressor layer and tape are added, and the film peels off cleanly along the weak graphene interface. It is then placed on any host substrate, while the graphene/SiC wafer goes back for the next growth.

- Page: https://www.labcanvas.com/templates/graphene-synthesis/graphene-remote-epitaxy-layer-transfer
- Open in the LabCanvas editor (LabCanvas account): https://www.labcanvas.com/editor.html?template=graphene-sic-layer-transfer
- Updated: 2026-10-14
- Category: Graphene synthesis
- Method: Epitaxial growth on SiC, bottom-up
- Starting materials: Epitaxial graphene on a SiC wafer
- Product: A single-crystal GaN film on a host substrate of choice, and a reusable graphene/SiC wafer
- Typical size: Wafer-scale films
- Key result: Single-crystal GaN with about 4 × 10⁸ cm⁻² defects, released with a smooth surface
- Scalability: Medium: wafer-scale, and the costly substrate is reused
- Figure: 1920 × 1080 px, 59 editable layers (13 generated objects with settings)

## Steps

1. **Epitaxial graphene on SiC**: Graphene grown on the SiC wafer is the growth template
2. **Grow GaN**: Single-crystal GaN grows on the graphene, aligned by the substrate
3. **Deposit a Ni stressor**: A strained nickel film on top drives the release
4. **Tape and peel**: With tape on the Ni, the GaN/Ni film releases at the weak graphene interface
5. **Place on a host**: Stick the film onto the target substrate
6. **Remove tape and Ni**: GaN stays on the host; the graphene/SiC wafer is reused

## Strengths

- The expensive SiC wafer can be reused
- Clean, precise release at the graphene interface
- Films move onto flexible or foreign substrates

## Limitations

- Needs high-quality epitaxial graphene
- The graphene interface limits film quality
- Extra stressor and tape steps

## Uses

- Transferable and flexible LEDs
- Heterogeneous integration of semiconductors
- Freestanding single-crystal membranes

## References

1. Kim et al., “Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene”, Nat. Commun. 2014. https://doi.org/10.1038/ncomms5836 (primary)
2. Kim et al., “Remote epitaxy through graphene enables two-dimensional material-based layer transfer”, Nature 2017. https://doi.org/10.1038/nature22053 (further reading)
3. Emtsev et al., “Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide”, Nat. Mater. 2009. https://doi.org/10.1038/nmat2382 (further reading)

Credit: Redrawn and simplified after Kim et al., Nat. Commun. 2014 (doi:10.1038/ncomms5836).

## Questions

**What does the “Graphene on SiC for remote epitaxy and layer transfer” template show?** Epitaxial graphene on SiC can serve as a reusable growth template. A single-crystal GaN film is grown on the graphene, a nickel stressor layer and tape are added, and the film peels off cleanly along the weak graphene interface. It is then placed on any host substrate, while the graphene/SiC wafer goes back for the next growth.

**What are the steps shown in “Graphene on SiC for remote epitaxy and layer transfer”?** 1. Epitaxial graphene on SiC: Graphene grown on the SiC wafer is the growth template. 2. Grow GaN: Single-crystal GaN grows on the graphene, aligned by the substrate. 3. Deposit a Ni stressor: A strained nickel film on top drives the release. 4. Tape and peel: With tape on the Ni, the GaN/Ni film releases at the weak graphene interface. 5. Place on a host: Stick the film onto the target substrate. 6. Remove tape and Ni: GaN stays on the host; the graphene/SiC wafer is reused.

**What are the starting materials and the product?** Starting materials: Epitaxial graphene on a SiC wafer. Product: A single-crystal GaN film on a host substrate of choice, and a reusable graphene/SiC wafer.

**Which papers is “Graphene on SiC for remote epitaxy and layer transfer” based on?** Kim et al., “Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene”, Nat. Commun. 2014 (doi:10.1038/ncomms5836); Kim et al., “Remote epitaxy through graphene enables two-dimensional material-based layer transfer”, Nature 2017 (doi:10.1038/nature22053); Emtsev et al., “Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide”, Nat. Mater. 2009 (doi:10.1038/nmat2382).

**Can I edit the “Graphene on SiC for remote epitaxy and layer transfer” template?** Yes. Open it in the LabCanvas editor: all 59 layers are editable, including 13 generated objects (structures, plots, equipment) with their own settings. Change the text, colours and layout, then export PNG, TIFF, SVG or PDF.

**Do I need an account to use this template?** Not to view it here. To open and edit it, sign in to LabCanvas or create a free account (the free plan keeps one design of each kind). Downloading the figure is part of LabCanvas Pro (US$19 a month or US$199 a year).