Graphene electronics

Graphene devices in six panels: a Hall bar on SiO₂/Si, an hBN-encapsulated device with edge contacts, the field-effect transfer curve, RF transistors with an f_T benchmark, a suspended mechanical resonator, and the quantum Hall resistance standard on epitaxial graphene.

1. Hall bar: Graphene on SiO₂ over doped Si as the back gate (Novoselov et al. 2004); current through the end contacts, V_xx measured along the channel and V_xy across it. 2. Encapsulated, edge-contacted: hBN/graphene/hBN stacks contacted by metal along the one-dimensional edge (Wang et al. 2013); hBN as a substrate for high-quality graphene (Dean et al. 2010). 3. Field effect: The resistance peaks at the Dirac point; on 300 nm SiO₂ each volt on the gate adds 7.2 × 10¹⁰ carriers per cm², and the first devices reached about 10,000 cm²/V·s at room temperature (Novoselov et al. 2004). 4. RF transistors: On epitaxial graphene on the Si face of SiC, a cutoff frequency of 100 GHz for a gate length of 240 nm (Lin et al. 2010); f_T is the unity-current-gain frequency (Petrone et al. 2013). 5. Resonators: Single- and multilayer sheets exfoliated over trenches in silicon oxide vibrate at fundamental frequencies in the MHz range, actuated optically or electrically and read out by interferometry (Bunch et al. 2007). 6. Resistance standard: Monolayer epitaxial graphene quantized the Hall resistance to 3 parts per billion at 300 mK (Tzalenchuk et al. 2010); on epitaxial graphene only ν = 2, 6, 10 appear and only the ν = 2 plateau, R_K/2 ≈ 12 906 Ω, is fully quantized (Panna et al. 2021; Liu et al. 2020).

Starting materials: Exfoliated graphene on SiO₂/Si or in hBN, epitaxial graphene on SiC. Product: Transistors, resonators and quantum resistance standards.

Novoselov et al., “Electric field effect in atomically thin carbon films”, Science 2004 (doi:10.1126/science.1102896); Wang et al., “One-dimensional electrical contact to a two-dimensional material”, Science 2013 (doi:10.1126/science.1244358); Lin et al., “100-GHz transistors from wafer-scale epitaxial graphene”, Science 2010 (doi:10.1126/science.1184289); Bunch et al., “Electromechanical resonators from graphene sheets”, Science 2007 (doi:10.1126/science.1136836); Tzalenchuk et al., “Towards a quantum resistance standard based on epitaxial graphene”, Nat. Nanotechnol. 2010 (doi:10.1038/nnano.2009.474); Dean et al., “Boron nitride substrates for high-quality graphene electronics”, Nat. Nanotechnol. 2010 (doi:10.1038/nnano.2010.172); Petrone et al., “Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates”, Nano Lett. 2013 (doi:10.1021/nl303666m); Liao et al., “High-speed graphene transistors with a self-aligned nanowire gate”, Nature 2010 (doi:10.1038/nature09405); Panna et al., “Graphene quantum Hall effect parallel resistance arrays”, Phys. Rev. B 2021 (doi:10.1103/physrevb.103.075408); Liu et al., “Analysing quantized resistance behaviour in graphene Corbino p-n junction devices”, J. Phys. D 2020 (doi:10.1088/1361-6463/ab83bb); Kim et al., “Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric”, Appl. Phys. Lett. 2009 (doi:10.1063/1.3077021).

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